Multi-layer structures and methods of forming

ABSTRACT

A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims the benefit of U.S. Provisional Application No.62/773,559, filed on Nov. 30, 2018, which application is herebyincorporated herein by reference.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as, for example, personal computers, cell phones, digital cameras,and other electronic equipment. Semiconductor devices are typicallyfabricated by sequentially depositing insulating or dielectric layers,conductive layers, and semiconductor layers of material over asemiconductor substrate, and patterning the various material layersusing lithography to form circuit components and elements thereon.

The semiconductor industry continues to improve the integration densityof various electronic components (e.g., transistors, diodes, resistors,capacitors, etc.) by continual reductions in minimum feature size, whichallow more components to be integrated into a given area. However, asthe minimum features sizes are reduced, additional problems arise thatshould be addressed.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1-25 are cross-sectional views of intermediate steps in theformation of various devices in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Multi-layer structures, and methods of forming multi-layer structures,are provided in accordance with some embodiments. The multi-layerstructures may have sidewalls having profiles that may be tailored to aparticular design. For example, in a multi-layered structure, one layerof the multi-layered structure may have a sidewall that extends at afirst angle, a second layer of the multi-layered structure may have asidewall that extends at a second angle, and the first and second anglemay be different from each other. The multi-layer structure may alsoinclude additional layers, and sidewalls of the additional layers mayextend at angles that are the same as the first angle or the secondangle, or different from the first angle or the second angle. In thismanner, a desired sidewall profile of the multi-layer structure may beachieved.

In accordance with some embodiments, a desired sidewall profile of amulti-layer structure may be achieved with only onedeposition/lithography/etching process, instead of using multipledeposition/lithography/etching processes. Accordingly, a multi-layerstructure having a desired sidewall profile may be formed at a lowercost and with less time. Manufacturing cycle times and/or outputs may beimproved.

In accordance with some embodiments, a multi-layer structure having asidewall profile as described herein may be utilized in the formation ofintegrated Silicon-nanosystem (Si-nanosystem) devices that containsandwich architectures extending beside and/or overlying multi-layerstructures. In some embodiments the multi-layer structures overlie asilicon-complementary metal oxide semiconductor (CMOS) chip. SomeSi-nanosystem devices may include a multi-layer structure over the CMOSchip. One or more layers may overlie the multi-layer structure, andthese layers may extend laterally beyond the multi-layer structure overthe CMOS chip. In some devices, it may be desirable to form a firstlayer of the one or more layers in a manner that a first portion of thefirst layer that does not overlie the multi-layer structure isdiscontinuous with a second portion of the first layer that overlies themulti-layer structure. Similarly, in some devices it may be desirable toform a second layer in a manner that a first portion of the second layerthat contacts the first portion of the first layer is discontinuous froma second portion of the second layer that overlies the second portion ofthe first layer. Other layers may be desired to be continuous betweenportions of the layers that overlie the multi-layer structure andportions that do not overlie the multi-layer structure. The sidewallprofile of the multi-layer structure may be designed in a matter that atleast a portion of the sidewall helps to confine and/or cut off thefirst portion of the first layer from the second portion of the firstlayer, and/or the first portion of the second layer from the secondportion of the second layer, while allowing other layers to be formed tobe continuous.

Referring to FIG. 1, a substrate 100 is provided. Any suitable substratemay be used. In some embodiments, substrate 100 may include anintegrated circuit that includes one or more active devices, passivedevices, and electrical circuits, and one or more layers may be formedover the integrated circuit. For example, substrate 100 may include acomplementary metal-oxide-semiconductor (CMOS) chip. Substrate 100 mayalso include one or more dielectric layers formed over the CMOS chip. Insome embodiments, substrate 100 may include any number of siliconlayers, metal layers, conductive layers, semiconductive layers, or thelike. In some embodiments, substrate 100 may be free of active devices,and may include only passive devices or electrical connectors. In otherembodiments, substrate 100 may be free of any active devices, passivedevices, or electrical connectors. Any suitable materials may be used toform substrate 100. In some embodiments, substrate 100 may have athickness T2 of about 50 Å to about 700,000 Å.

A first layer 102 is formed over substrate 100. In some embodiments,first layer 102 may be a monolithic or heterogeneous thin film. In someembodiments, first layer 102 may be a metal or a metal-containingmaterial. For example, first layer 102 may include titanium (Ti), copper(Cu), nickel (Ni), chromium (Cr), and/or aluminum (Al). In someembodiments, first layer 102 may include a combination of metalmaterials, such as aluminum copper (AlCu). In other embodiments, firstlayer 102 may include a dielectric material. For example, first layer102 may include a silicon-based dielectric material, such as siliconoxide or silicon nitride.

A material composition of first layer 102 may be selected according toan etch rate of the material composition in a etching process, by itselfand/or as compared to the material composition of second layer 104 andthird layer 106 (discussed below). For example, the materialcompositions of each layer, by themselves and/or as compared to otherlayers, may be selected according to the etch rate of each layer in aparticular etching process and a desired sidewall profile of amulti-layer structure being formed.

First layer 102 may be deposited, for example using chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), or the like. First layer102 may have a thickness T3 of about 50 Å to about 5000 Å.

A second layer 104 is formed over first layer 102. In some embodiments,second layer 104 may be a monolithic or heterogeneous thin film. Secondlayer 104 may be formed of the same material as first layer 102, or maybe formed of a different material than first layer 102. For example,second layer 104 may include Ti, Cu, Ni, Cr, and/or Al. In someembodiments, second layer 104 may include a combination of metalmaterials, such as AlCu. In other embodiments, second layer 104 mayinclude a dielectric material. For example, second layer 104 may includea silicon-based dielectric material, such as silicon oxide or siliconnitride. When first layer 102 is composed of a metal or ametal-containing material, second layer 104 may also be composed of ametal or metal-containing material. Similarly, when first layer 102 iscomposed of a dielectric material, second layer 104 may also be composedof a dielectric material.

As discussed above in connection with first layer 102, a materialcomposition of second layer 104 may be selected according to an etchrate of the material composition in a etching process, by itself and/oras compared to the material composition of first layer 102 and thirdlayer 106 (discussed below). For example, the material compositions ofeach layer, by themselves and compared to other layers, may be selectedaccording to the etch rate of each layer in a particular etching processand a desired sidewall profile of a multi-layer structure being formed.

Second layer 104 may be deposited using the same or similar methods asdescribed above in connection with first layer 102. For example, secondlayer 104 may be deposited using CVD, ALD, PVD, PECVD, or the like.Second layer 104 may have a thickness T4 of about 50 Å to about 50000 Å.

A third layer 106 is formed over second layer 104. In some embodiments,third layer 106 may be a monolithic or heterogeneous thin film. Thirdlayer 106 may be formed of the same material as first layer 102 and/orsecond layer 104, or may be formed of a different material than firstlayer 102 and/or second layer 104. For example, third layer 106 mayinclude Ti, Cu, Ni, Cr, and/or Al. In some embodiments, third layer 106may include a combination of metal materials, such as AlCu. In otherembodiments, third layer 106 may include a dielectric material. Forexample, third layer 106 may include a silicon-based dielectricmaterial, such as silicon oxide or silicon nitride. When first layer 102is composed of a metal or a metal-containing material and second layer104 is composed of a metal or a metal-containing material, third layer106 may also be composed of a metal or metal-containing material.Similarly, when first layer 102 and second layer 104 are composed ofdielectric material(s), third layer 106 may also be composed of adielectric material.

As discussed above in connection with first layer 102 and second layer104, a material composition of third layer 106 may be selected accordingto an etch rate of the material composition in a etching process, byitself and/or as compared to the material composition of first layer 102and second layer 104 (discussed below). For example, the materialcompositions of each layer, by themselves and compared to other layers,may be selected according to the etch rate of each layer in a particularetching process and a desired sidewall profile of a multi-layerstructure being formed.

Third layer 106 may be deposited using the same or similar methods asdescribed above in connection with first layer 102 and second layer 104.For example, third layer 106 may be deposited using CVD, ALD, PVD,PECVD, or the like. Third layer 106 may have a thickness T5 of about 50Å to about 5000 Å.

A photoresist 108 is formed over third layer 106, for example using aspin coating process. Photoresist 108 may be a positive photoresist or anegative photoresist, and may be a single-layer or a tri-layerphotoresist. Photoresist 108 is patterned to form the patternedphotoresist 108 shown in FIG. 1. In some embodiments, photoresist 108 ispatterned using one or more lithography and/or etching steps. As shownin FIG. 1, after photoresist 108 is patterned, first layer 102, secondlayer 104, and third layer 106 each extend laterally beyond sidewalls ofpatterned photoresist 108. Patterned photoresist 108 may have athickness T1 of about 5000 Å to about 20000 Å. Patterned photoresist 108may have a width W1 of about 2000 Å to about 50000 Å.

Next, a first etching process is performed using patterned photoresist108 as an etching mask. The first etching process may be a dry etchingprocess. In some embodiments, for example when the first layer 102, thesecond layer 104, and the third layer 106 are formed of one or moredielectric materials, the first etching process may use carbon andfluorine as etchants, and may also use oxygen gas or an oxygen gasmixture in some embodiments. In some embodiments, for example when thefirst layer 102, the second layer 104, and the third layer 106 areformed of one or more metal materials, the first etching process mayalso use carbon and fluorine as etchants. For example, when the firstlayer 102, the second layer 104, and the third layer 106 are formed ofone or more metal materials, the first etching process may use CF₄ andO₂ as etching materials. In some embodiments, the first etching processmay use CF₄, CHF₃, C₂F₂, BCl₃, HBr, CH₄, or the like as an etchant(s).The etchants selected for the first etching process may be selected onthe basis of the material compositions of first layer 102, second layer104, and/or third layer 106, and according to a desired sidewall profileof first layer 102, second layer 104, and third layer 106 after thefirst etching process. Portions of first layer 102, second layer 104,and third layer 103 that do not underlie the patterned photoresist 108may be removed during the first etching process. In some embodiments,the first etching process may have an etching duration of about 25seconds to 250 seconds, and an etching temperature of about 10° C. toabout 100° C. In some embodiments, the first etching process may occurat an etching pressure of about 10 mTorr-300 mTorr.

As shown in FIG. 2, after the first etching process, the multi-levelstructure formed by first layer 102, second layer 104, and third layer106 may have sidewalls that are tapered. For example, sidewalls of firstlayer 102, second layer 104, and/or third layer 106 may extend at anangle θ1 with respect to a major surface of substrate 100. In someembodiments, angle θ1 may be about 30° to about 90°. An angle of asidewall of first layer 102 may extend at a same angle with respect tothe major surface of substrate 100 as an angle of a sidewall of secondlayer 104, or the angle of the sidewall of first layer 102 may extend ata different angle than the sidewall of second layer 104 (for example dueto materials compositions of first layer 102 and second layer 104 havingdifferent etch rates with respect to the first etching process).Similarly, the angle of first layer 102 may extend at a same angle withrespect to the major surface of substrate 100 as an angle of a sidewallof third layer 106, or the angle of the sidewall of first layer 102 mayextend at a different angle than the sidewall of third layer 106 (forexample due to materials compositions of first layer 102 and third layer106 having different etch rates with respect to the first etchingprocess). Further, the angle of second layer 104 may extend at a sameangle with respect to the major surface of substrate 100 as an angle ofa sidewall of third layer 106, or the angle of the sidewall of secondlayer 104 may extend at a different angle than the sidewall of thirdlayer 106 (for example due to materials compositions of third layer 106and second layer 104 having different etch rates with respect to thefirst etching process). As shown in FIG. 2, after the first etchingprocess terminates the edges of first layer 102, second layer 104,and/or third layer 106 may extend laterally beyond the edges ofpatterned photoresist 108. For example, first layer 102 may extend adistance D1 beyond one or more edges of patterned photoresist 108. Insome embodiments, D1 is about 50 Å to about 1500 Å.

Next, referring to FIG. 3, a polymer 110 is formed along edges ofpatterned photoresist 108 and along sidewalls of first layer 102, secondlayer 104, and third layer 106. In some embodiments, polymer 110 isdeposited. For example, in some embodiments polymer-forming gases may beused during the polymer deposition step, to coat the multilayerstructure sidewalls and assist in etch profile control. Although FIG. 3depicts polymer 110 being formed solely along the sidewalls of patternedphotoresist 108 and along sidewalls of first layer 102, second layer104, and third layer 106, in some embodiments polymer 100 may alsoextend over the patterned photoresist 108. In some embodiments, thepolymer-forming gases include CHF₃, CH₂F₂, CF₄, C₂F₆, and C₄F₈, or thelike. During the forming of polymer 110, a plasma source gas is fed intoa process chamber, with a flow rate of the plasma source gas beingdependent on the process chamber design. In some embodiments, a feedingrate of the plasma source gas and/or the deposition time may beoptimized to selectively control polymer 110 to be formed along theedges of patterned photoresist 108 and along the sidewalls of firstlayer 102, second layer 104, and third layer 106, according to a desireddesign. A thickness of polymer 110 may be thinnest at a top portion ofpolymer 110 and thicker at a bottom portion of polymer 110, and athickness of polymer 110 may vary according to height. The bottomportion of polymer 110 may contact substrate 100.

Referring to FIG. 4, the polymer 110 is removed. In some embodiments,polymer 110 may be removed using an O₂ ashing process. The O₂ ashingprocess may consume a portion of the patterned photoresist 108. Forexample, a thickness of the patterned photoresist 108 may be reduced bythe O₂ ashing process. In some embodiments, after the O₂ ashing processthe patterned photoresist 108 may have a thickness T6. Thickness T6 maybe about 1500 Å to about 15000 Å. After the O₂ ashing process, thepatterned photoresist 108 may have a top surface that is concave. Inother embodiments, the patterned photoresist 108 may have a top surfacethat is planar after the O₂ ashing process. After the O₂ ashing process,patterned photoresist 108 may have tapered sidewalls. For example, awidth of the patterned photoresist 108 may vary according to height. Awidth W2 of the top surface of patterned photoresist 108 after the O₂ashing process may be about 2000 Å to about 15000 Å. A width W3 of thebottom surface of patterned photoresist 108 after the O₂ ashing processmay be about 3000 Å to about 20000 Å. A top surface of third layer 106may be exposed by the consuming of the patterned photoresist 108 by theO₂ mixture in the ashing process. In some embodiments, a portion of oneor more of first layer 102, second layer 104, and/or third layer 106 maybe consumed by the O₂ ashing process.

Next, referring to FIG. 5, a second etching process is performed usingthe patterned photoresist 108 as an etch mask. The second etchingprocess may be a dry etching process in some embodiments. In someembodiments, an etching material may be selected according to a desiredsidewall profile of first layer 102, second layer 104, and third layer106, and according to a material composition of first layer 102, secondlayer 104, and third layer 106. The etching material may comprise thesame or similar materials as is used in the first etching processdescribed above. For example, CHF₃, CH₂F₂, CF₄, C₂F₆, and C₄F₈ alongwith an O₂ mixture may be used as etchants in some embodiments, forexample when first layer 102, second layer 104, and third layer 106 areformed of one or more dielectric materials. The etching material maycomprise CF₄ and O₂ in some embodiments, for example when first layer102, second layer 104, and third layer 106 are formed of one or moremetal materials. In some embodiments, the second etching process mayhave an etching duration of about 25 seconds to 250 seconds, and anetching temperature of about 10° C. to about 100° C. In someembodiments, the second etching process may occur at an etching pressureof about 10 mTorr-300 mTorr. The etching parameters of the secondetching process may be the same as, or different to, the etchingparameters of the first etching process.

The second etching process may continue until a desired profile ofcombined sidewalls of first layer 102, second layer 104, and third layer106 are achieved. For example, FIG. 5 depicts a particular sidewallprofile of a multilayer structure 112 formed by first layer 102, secondlayer 104, and third layer 106. When the desired sidewall profile ofmultilayer structure 112 is achieved, the second etching process mayterminate. In some embodiments, the achieving of the desired sidewallprofile may be determined according to an elapsed time of the secondetching process. In some embodiments, the achieving of the desiredsidewall profile may be determined using measurement.

Next, the patterned photoresist 108 is removed, for example using anashing process. The resulting structure is shown in FIG. 6. A multilayerstructure 112, as depicted in FIG. 6, includes first layer 102, secondlayer 104, and third layer 106. Each of first layer 102, second layer104, and third layer 106 has respective sidewalls that form respectiveangles with respect to a major surface of substrate 100. For example,sidewalls of first layer 102 have a footing angle θ₂ with respect to themajor surface of substrate 100. In some embodiments, footing angle θ₂ isabout 55° to about 90°. Sidewalls of second layer 104 have a re-entrantangle θ₃ with respect to the major surface of substrate 100. In someembodiments, re-entrant angle θ₃ is about 80° to about 145°. Sidewallsof third layer 106 have a taper angle θ₄ with respect to the majorsurface of substrate 100. In some embodiments, taper angle θ₄ is about55° to about 100°.

Any combination is possible, according to material compositions of eachof first layer 102, second layer 104, and third layer 106, and accordingto the etchants used in the second etching process described above inconnection with FIG. 5. As described earlier, the processes describedabove may be used to form multi-layer structures having sidewallprofiles that are tailored to a particular desired design. The etchingmaterials (for example CF4, O2, or the like), a source power (forexample a source power in a range of about 100 W to about 1500 W), anetching duration (for example an etching duration of about 25 seconds toabout 250 seconds), and other etching parameters may be selected toyield multilayer structures having a particular sidewall profile. In anembodiment, the footing angle is about 89°, the re-entrant angle isabout 88°, and the taper angle is about 83°. In another embodiment, thefooting angle is about 60°, the re-entrant angle is about 130°, and thetaper angle is about 67°. In another embodiment, the footing angle isabout 64°, the re-entrant angle is about 105°, and the taper angle isabout 61°.

In this manner, by varying the material compositions of first layer 102,second layer 104, and/or third layer 106, and/or the etchants andetching parameters used in the etching processes described herein, thefooting angle, re-entrant angle, and taper angle may be varied, and aparticular sidewall profile of multilayer structure 112 may be achieved.

In some embodiments, the different etch rates of different layers of themultilayer structure 112 may create non-continuous sidewalls ofmultilayer structure 112, particularly at the interfaces of differentlayers of the multilayer structure 112. For example, at the interface offirst layer 102 and second layer 104, the sidewall of second layer 104may be offset a distance D5 from the sidewall of first layer 102. Insome embodiments, distance D5 may be about OA to about 1000 Å. At theinterface of second layer 104 and third layer 106, the sidewall ofsecond layer 104 may be offset a distance D6 from the sidewall of secondlayer 104. In some embodiments, distance D6 may be about OA to about 300Å. In the embodiment discussed above where the footing angle is about64°, the re-entrant angle is about 105°, and the taper angle is about61°, D5 is about 16 nm and D6 is about lnm. In the embodiment discussedabove where the footing angle is about 60°, the re-entrant angle isabout 130°, and the taper angle is about 67°, D5 is about 55 nm and D6is about 14 nm.

In some devices, it may be desirable to form multiple multilayerstructures side by side. FIGS. 7 through 12 depict the formation of amultiple multilayer structures side by side on a substrate 116.

Referring to FIG. 7, a first multilayer structure may be formed in firstregion 124 and a second multilayer structure may be formed in secondregion 126. A first layer 118, a second layer 120, and a third layer 122are formed over substrate 116. First layer 118, second layer 120, andthird layer 122 may be the same as, or similar to, first layer 102,second layer 104, and third layer 106, respectively, and the discussionabove of first layer 102, second layer 104, and third layer 106 isincorporated herein in full. As discussed above in connection with firstlayer 102, second layer 104, and third layer 106, material compositionsof first layer 118, second layer 120, and/or third layer 122 may beselected according to an etch rate of the material compositions in aparticular etching process, either each respective layer by itselfand/or as compared to the material compositions of the other layers. Forexample, the material compositions of each layer, by themselves andcompared to other layers, may be selected according to the etch rate ofeach layer in a particular etching process and desired sidewall profilesof multiple multi-layer structures being formed.

In some embodiments, first layer 118 may be formed of a same material ineach of first region 124 and second region 126. In other embodimentsfirst layer 118 may have different material compositions in first region124 and second region 126, for example to form a multilayer structure infirst region 124 that has a sidewall profile that is different from amultilayer structure in second region 126. In some embodiments, secondlayer 120 may be formed of a same material in each of first region 124and second region 126. In other embodiments second layer 120 may havedifferent material compositions in first region 124 and second region126, for example to form a multilayer structure in first region 124 thathas a sidewall profile that is different from a multilayer structure insecond region 126. In some embodiments, third layer 122 may be formed ofa same material in each of first region 124 and second region 126. Inother embodiments third layer 122 may have different materialcompositions in first region 124 and second region 126, for example toform a multilayer structure in first region 124 that has a sidewallprofile that is different from a multilayer structure in second region126.

A first patterned photoresist 128 is formed over third layer 122 infirst region 124 and a second patterned photoresist 130 is formed overthird layer 122 in second region 126. For example, a photoresistmaterial may be formed over third layer 122 using a spin coatingprocess. The photoresist material may be a positive photoresist materialor a negative photoresist material, and may be a single layer ortri-layer photoresist. The photoresist material is then patterned toform first patterned photoresist 128 in first region 124 and secondpatterned photoresist 130 in second region 126. In some embodiments, thephotoresist material is patterned using one or more lithograpy and/oretching steps. As shown in FIG. 7, after the photoresist is patterned,first layer 118, second layer 120, and third layer 122 each extendlaterally beyond sidewalls of first patterned photoresist 128 and secondpatterned photoresist 130. The thicknesses and widths of first patternedphotoresist 128 and second patterned photoresist 130 may be the same as,or similar to, the thickness and width of patterned photoresist 108discussed above in connection with FIG. 1. The thickness and/or width offirst patterned photoresist 128 may be the same as the thickness and/orwidth of second patterned photoresist 130. In other embodiments, thethickness and/or width of first patterned photoresist 128 may bedifferent than the thickness and/or width of second patternedphotoresist 130. In some embodiments, first patterned photoresist 128 islocated a minimum distance D2 from second patterned photoresist 130,where D2 is about 5000 Å to about 50000 Å.

Next, a first etching process is performed using first patternedphotoresist 128 and second patterned photoresist 130 as etching masks.The first etching process may be the same as, or similar to, the firstetching process described above in connection with FIG. 2, and thediscussion above is incorporated herein in full. Portions of first layer118, second layer 120, and third layer 122 that do not underlie firstpatterned photoresist 128 or second patterned photoresist 130 may beremoved during the first etching process.

As shown in FIG. 8, after the first etching process, the multi-levelstructures formed by first layer 118, second layer 120, and third layer122 in first region 124 may have sidewalls that are tapered. Forexample, sidewalls of first layer 118, second layer 120, and/or thirdlayer 122 in first region 124 may extend at an angle θ₅ in first region124 with respect to a major surface of substrate 116. In someembodiments, angle θ₅ may be about 60° to about 90°. An angle of asidewall of first layer 118 in first region 124 may extend at a sameangle with respect to the major surface of substrate 116 as an angle ofa sidewall of second layer 120 in first region 124, or the angle of thesidewall of first layer 118 in first region 124 may extend at adifferent angle than the sidewall of second layer 120 in first region124. Similarly, the angle of first layer 118 in first region 124 mayextend at a same angle with respect to the major surface of substrate116 as an angle of a sidewall of third layer 122 in first region 124, orthe angle of the sidewall of first layer 118 in first region 124 mayextend at a different angle than the sidewall of third layer 122 infirst region 124. Further, the angle of second layer 120 in first region124 may extend at a same angle with respect to the major surface ofsubstrate 116 as an angle of a sidewall of third layer 122 in firstregion 124, or the angle of the sidewall of second layer 120 in firstregion 124 may extend at a different angle than the sidewall of thirdlayer 122 in first region 124.

After the first etching process, the multi-level structures formed byfirst layer 118, second layer 120, and third layer 122 in second region126 may have sidewalls that are tapered. For example, sidewalls of firstlayer 118, second layer 120, and/or third layer 122 in second region 126may extend at an angle θ₆ in second region 126 with respect to a majorsurface of substrate 116. In some embodiments, angle θ₆ may be about 60°to about 90°. An angle of a sidewall of first layer 118 in second region126 may extend at a same angle with respect to the major surface ofsubstrate 116 as an angle of a sidewall of second layer 120 in secondregion 126, or the angle of the sidewall of first layer 118 in secondregion 126 may extend at a different angle than the sidewall of secondlayer 120 in second region 126. Similarly, the angle of first layer 118in second region 126 may extend at a same angle with respect to themajor surface of substrate 100 as an angle of a sidewall of third layer122 in second region 126, or the angle of the sidewall of first layer118 in second region 126 may extend at a different angle than thesidewall of third layer 122 in second region 126. Further, the angle ofsecond layer 120 in second region 126 may extend at a same angle withrespect to the major surface of substrate 116 as an angle of a sidewallof third layer 122 in second region 126, or the angle of the sidewall ofsecond layer 120 in second region 126 may extend at a different anglethan the sidewall of third layer 122 in second region 126.

For each of first layer 118, second layer 120, and third layer 122, whenthe respective layer has a same material composition in each of firstregion 124 and second region 126, the angles formed by the sidewalls ofthe respective layer in the first region 124 and the second region 126may be the same. When the respective layer has a different materialcomposition in first region 124 than in second region 126, the anglesformed by the sidewalls of the respective layer in the first region 124and the second region 126 may be different.

As shown in FIG. 8, after the first etching process terminates the edgesof first layer 118, second layer 120, and/or third layer 122 may extendlaterally beyond the edges of first patterned photoresist 128. Forexample, third layer 122 may extend a distance D3 beyond one or moreedges of first patterned photoresist 128. In some embodiments, D3 isabout 200 Å to about 5000 Å. Further, after the first etching processterminates the edges of first layer 118, second layer 120, and/or thirdlayer 122 may extend laterally beyond the edges of second patternedphotoresist 130. For example, third layer 122 may extend a distance D4beyond one or more edges of second patterned photoresist 130. In someembodiments, D4 is about 200 Å to about 5000 Å. Distances D3 may be thesame as distance D4 or different, for example depending on the materialcomposition of third layer 122 in first region 124 and second region 126and/or the etchant(s) used in the first etching process.

Next, referring to FIG. 9, a polymer 132 is formed along edges of firstpatterned photoresist 128 and second patterned photoresist 130, andalong sidewalls of first layer 118, second layer 120, and third layer122. In some embodiments, polymer 132 is deposited, for example usingCVD, ALD, PVD, PECVD, or the like. In each of first region 124 andsecond region 126, a thickness of polymer 132 may be thinnest at a topportion of polymer 132 and thicker at a bottom portion of polymer 132,and a thickness of polymer 132 may vary according to height. The bottomportions of polymer 132 may contact substrate 116.

Referring to FIG. 10, polymer 132 is removed. In some embodiments,polymer 132 may be removed using an O₂ ashing process. The O₂ ashingprocess may consume a portion of first patterned photoresist 128 and/orsecond patterned photoresist 130. For example, a thickness of the firstpatterned photoresist 128 and/or the second patterned photoresist 130may be reduced by the O₂ ashing process. In some embodiments, after theO₂ ashing process the first patterned photoresist 128 may have athickness T7. Thickness T7 may be about 1500 Å to about 10000 Å. In someembodiments, after the O₂ ashing process the second patternedphotoresist 130 may have a thickness T8. Thickness T8 may be about 1500Å to about 10000 Å.

After the O₂ ashing process, the first patterned photoresist 128 and/orthe second patterned photoresist 130 may have top surfaces that areconcave or otherwise non-planar. In other embodiments, the firstpatterned photoresist 128 and/or the second patterned photoresist 130may have top surfaces that are planar after the O₂ ashing process.

After the O₂ ashing process, the first patterned photoresist 128 and/orthe second patterned photoresist 130 may have tapered sidewalls. Forexample, a width of the first patterned photoresist 128 and/or a widthof the second patterned photoresist 130 may vary according to height. Awidth W4 of the top surface of first patterned photoresist 128 after theO₂ ashing process may be about 2000 Å to about 10000 Å. A width W5 ofthe bottom surface of the first patterned photoresist 128 after the O₂ashing process may be about 4000 Å to about 16000 Å. A width W6 of thetop surface of second patterned photoresist 130 after the O₂ ashingprocess may be about 2000 Å to about 10000 Å. A width W7 of the bottomsurface of the second patterned photoresist 130 after the O₂ ashingprocess may be about 4000 Å to about 16000 Å. A top surface of thirdlayer 122 may be exposed by the consuming of the first patternedphotoresist 128 and/or the second patterned photoresist 130 by the O₂ashing process. In some embodiments, a portion of one or more of firstlayer 118, second layer 120, and/or third layer 122 may also be consumedby the O₂ ashing process.

Next, referring to FIG. 11, a second etching process is performed usingthe first patterned photoresist 128 and the second patterned photoresist130 as etch masks. The second etching process may be the same as thesecond etching process described above in connection with FIG. 5, andthe discussion above is incorporated herein in full.

The second etching process may continue until a desired profile ofcombined sidewalls of first layer 118, second layer 120, and third layer122 are achieved in first region 124 and second region 126. For example,FIG. 11 depicts a particular sidewall profile of a first multilayerstructure 134 formed by first layer 118, second layer 120, and thirdlayer 122 in first region 124, and a particular sidewall profile of asecond multilayer structure 136 formed by first layer 118, second layer120, and third layer 122 in second region 126. When the desired sidewallprofiles of multilayer structures 124 and 126 are achieved, the secondetching process may terminate. In some embodiments, the achieving of thedesired sidewall profiles may be determined according to an elapsed timeof the second etching process. In some embodiments, the achieving of thedesired sidewall profiles may be determined using measurement. Thedesired sidewall profiles of the multilevel structures formed in thefirst region 124 and the second region 126 may be the same or different.

Next, the first patterned photoresist 128 and the second patternedphotoresist 130 are removed, for example using an ashing process. Theresulting structure is shown in FIG. 12. FIG. 12 depicts an expandedview of the multilayer structures shown in FIG. 11. A first multilayerstructure 134, as depicted in FIG. 12, includes first layer 118, secondlayer 120, and third layer 122. Each of first layer 118, second layer120, and third layer 122 comprised in first multilayer structure 134 ofFIG. 12 have respective sidewalls that form respective angles withrespect to a major surface of substrate 116. For example, sidewalls offirst layer 118 of first multilayer structure 134 have a footing angleθ₇ with respect to the major surface of substrate 116. In someembodiments, footing angle θ₇ is about 55° to about 90°. Sidewalls ofsecond layer 120 of first multilayer structure 134 have a re-entrantangle θ₈ with respect to the major surface of substrate 116. In someembodiments, re-entrant angle θ₈ is about 80° to about 145°. Sidewallsof third layer 122 of first multilayer structure 134 have a taper angleθ₉ with respect to the major surface of substrate 116. In someembodiments, taper angle θ₉ is about 55° to about 116°.

Any combination is possible, according to material compositions of eachof first layer 118, second layer 120, and third layer 122, and accordingto the etchants used in the second etching process described above inconnection with FIG. 11. For example, as described above in connectionwith FIG. 6, in an embodiment, the footing angle of first multilayerstructure 134 is about 89°, the re-entrant angle of first multilayerstructure 134 is about 88°, and the taper angle of first multilayerstructure 134 is about 83°. In another embodiment, the footing angle offirst multilayer structure 134 is about 60°, the re-entrant angle offirst multilayer structure 134 is about 130°, and the taper angle offirst multilayer structure 134 is about 67°. In another embodiment, thefooting angle of first multilayer structure 134 is about 64°, there-entrant angle of first multilayer structure 134 is about 105°, andthe taper angle of first multilayer structure 134 is about 61°. In thismanner, by varying the materials used and the parameters and etchants ofthe etching processes as described herein, a particular footing angle,re-entrant angle, and taper angle may be formed, and a particularsidewall profile of first multilayer structure 134 may be achieved.

A second multilayer structure 136, as depicted in FIG. 12, includesfirst layer 118, second layer 120, and third layer 122. Each of firstlayer 118, second layer 120, and third layer 122 comprised in secondmultilayer structure 136 have respective sidewalls that form respectiveangles with respect to a major surface of substrate 116. For example,sidewalls of first layer 118 of second multilayer structure 136 have afooting angle θ₁₀ with respect to the major surface of substrate 116. Insome embodiments, footing angle θ₁₀ is about 55° to about 90°. Footingangle θ₁₀ may be the same as footing angle θ₇ or may be different thanfooting angle θ₇, for example depending on material compositions offirst layer 118 in first region 124 and second region 126. Sidewalls ofsecond layer 120 of second multilayer structure 136 have a re-entrantangle θ₁₁ with respect to the major surface of substrate 116. In someembodiments, re-entrant angle θ₁₁ is about 80° to about 145°. Re-entrantangle θ₁₁ may be the same as re-entrant angle θ₈ or may be differentthan re-entrant angle θ₈, for example depending on material compositionsof second layer 120 in first region 124 and second region 126. Sidewallsof third layer 122 of second multilayer structure 136 have a taper angleθ₁₂ with respect to the major surface of substrate 116. In someembodiments, taper angle θ₁₂ is about 55° to about 116°. Taper angle θ₁₂may be the same as taper angle θ₉ or may be different than taper angleθ₉, for example depending on material compositions of third layer 122 infirst region 124 and second region 126.

Any desired sidewall profile of second multilayer structure 136 ispossible, according to material compositions of each of first layer 118,second layer 120, and third layer 122, and according to the etchantsused in the second etching process described above in connection withFIG. 11. In an embodiment, the footing angle of second multilayerstructure 136 is about 83°, the re-entrant angle of second multilayerstructure 136 is about 88°, and the taper angle of second multilayerstructure 136 is about 89°. In another embodiment, the footing angle ofsecond multilayer structure 136 is about 67°, the re-entrant angle ofsecond multilayer structure 136 is about 130°, and the taper angle ofsecond multilayer structure 136 is about 60°. In another embodiment, thefooting angle of second multilayer structure 136 is about 61°, there-entrant angle of second multilayer structure 136 is about 105°, andthe taper angle of second multilayer structure 136 is about 64°. In thismanner, by varying the footing angle, re-entrant angle, and taper angle,a particular sidewall profile of second multilayer structure 136 may beachieved.

FIGS. 1-12 depict the formation of multilevel structures that have threelayers. In some embodiments, the processes described above may be usedto form multilayer structures that comprise more than three layers. FIG.13 depicts a multilayer structure 138 that includes four layers. Firstlayer 140 may be the same as, or similar to, first layer 102 discussedabove in connection with FIG. 1, and the discussion above isincorporated herein. Second layer 142 and third layer 144 may each bethe same as, or similar to, second layer 104 discussed above inconnection with FIG. 1, and the discussion above is incorporated herein.In some embodiments, a material composition of second layer 142 andthird layer 144 are different. In other embodiments the materialcomposition of second layer 142 and third layer 144 are the same. Fourthlayer 146 may be the same as, or similar to third layer 106 discussedabove in connection with FIG. 1, and the discussion above of third layer106 is incorporated herein. Multilayer structure 138 may be formed usingthe processes described above in connection with FIGS. 1-12.

As shown in FIG. 13, a sidewall of first layer 140 may form a footingangle θ₁₃ with respect to a major surface of substrate 148. In someembodiments, footing angle θ₁₃ may be the same as, or similar to,footing angle θ₂ described above in connection with FIG. 6, and thediscussion above of footing angle θ₂ is incorporated herein. A sidewallof second layer 142 may form a re-entrant angle θ₁₄ with respect to themajor surface of substrate 148. In some embodiments, re-entrant angleθ₁₄ may be the same as, or similar to, re-entrant angle θ₃ describedabove in connection with FIG. 6, and the discussion above of re-entrantangle θ₃ is incorporated herein. A sidewall of third layer 144 may forma re-entrant angle θ₁₅ with respect to the major surface of substrate148. In some embodiments, re-entrant angle θ₁₅ may be the same as, orsimilar to, re-entrant angle θ₃ described above in connection with FIG.6, and the discussion above of re-entrant angle θ₃ is incorporatedherein. Re-entrant angles θ₁₄ and O₁₅ may be the same or may bedifferent. A sidewall of fourth layer 146 may form a taper angle θ₁₆with respect to the major surface of substrate 148. In some embodiments,taper angle θ₁₆ may be the same as, or similar to, taper angle θ₄described above in connection with FIG. 6, and the discussion above oftaper angle θ₄ is incorporated herein.

Various embodiments may be formed using the processes discussed above.Referring to FIG. 14, a structure is shown that includes a firstmultilayer structure 150 and a second multilayer structure 152 formedside-by-side on a substrate 154. Each of first multilayer structure 150and second multilayer structure 152 has four layers, for example asdescribed above in connection with FIG. 13. First multilayer structure150 and second multilayer structure 152 may be simultaneously formed,for example as described in connection with FIGS. 7-12. First multilayerstructure 150 may be substantially the same as second multilayerstructure 152, or first multilayer structure 150 may be different thatsecond multilayer structure 152. For example, the material compositionsof the layers of first multilayer structure 150 may be the same as thelayers of second multilayer structure 152. In this case, the sidewallprofiles of first multilayer structure 150 may be substantially the sameas the sidewall profiles of second multilayer structure 152. In otherembodiments, the material composition of one or more layers of firstmultilayer structure 150 may be different than one or more layers ofsecond multilayer structure 152. In this case, the sidewall profiles offirst multilayer structure 150 may be different than the sidewallprofiles of second multilayer structure 152.

FIG. 15 depicts a structure that includes a first multilayer structure156 and a second multilayer structure 158 formed side-by-side on asubstrate 160. The first multilayer structure 156 has four layers andthe second multilayer structure 152 has three layers, for example asdescribed above in connection with FIGS. 6 and 13. First multilayerstructure 156 and second multilayer structure 158 may be simultaneouslyformed, for example as described in connection with FIGS. 7-12.

FIG. 16 depicts a multilayer structure 176 that may be formed, forexample, using the processes discussed above in connection with FIGS.1-6. Multilayer structure 176 may include a bottom layer 164. Bottomlayer 164 may be the same as, or similar to, first layer 102 discussedabove in connection with FIG. 1, and the discussion above isincorporated herein. Multilayer structure 176 also includes middlelayers 166, 168, 170, and 172. Middle layers 166, 168, 170, and 172 mayeach be the same as, or similar to, second layer 104 discussed above inconnection with FIG. 1, and the discussion above is incorporated herein.Although four middle layers 166, 168, 170, and 172 are depicted in FIG.16, in other embodiments additional middle layers or fewer middle layersmay be used. In some embodiments, material compositions of middle layers166, 168, 170, and 172 may be different from each other. In otherembodiments the material composition of middle layers 166, 168, 170, and172 may be the same. Multilayer structure 176 also includes top layer174. Top layer 174 may be the same as, or similar to third layer 106discussed above in connection with FIG. 1, and the discussion above ofthird layer 106 is incorporated herein. Multilayer structure 176 may beformed using the processes described above in connection with FIGS.1-12.

As shown in FIG. 16, a sidewall of bottom layer 164 may form a footingangle θ₁₇ with respect to a major surface of substrate 162. In someembodiments, footing angle θ₁₇ may be the same as, or similar to,footing angle θ₂ described above in connection with FIG. 6, and thediscussion above of footing angle θ₂ is incorporated herein. A sidewallof each of middle layers 166, 168, 170, and 172 may each respectivelyform a re-entrant angle θ₁₈ with respect to the major surface ofsubstrate 162. In some embodiments, the re-entrant angle θ₁₈ of arespective middle layer may be the same as, or similar to, re-entrantangle θ₃ described above in connection with FIG. 6, and the discussionabove of re-entrant angle θ₃ is incorporated herein. The re-entrantangle of each of the middle layers 166, 168, 170, and 172 may be thesame as each other, or may be different from each other. A sidewall oftop layer 174 may form a taper angle θ₁₉ with respect to the majorsurface of substrate 162. In some embodiments, taper angle θ₁₉ may bethe same as, or similar to, taper angle θ₄ described above in connectionwith FIG. 6, and the discussion above of taper angle θ₄ is incorporatedherein.

FIG. 17 depicts a structure in which a first multilayer structure 178and a second multilayer structure 180 are formed next to each other on asubstrate 182. Each of first multilayer structure 178 and secondmultilayer structure 180 may be similar to multilayer structure 176shown in FIG. 16, and the discussion of multilayer structure 176 isincorporated herein. First multilayer structure 178 and secondmultilayer structure 180 may be simultaneously formed using theprocesses described above in connection with FIGS. 7-12.

FIG. 18 depicts a structure in which a first multilayer structure 184and a second multilayer structure 186 are formed next to each other on asubstrate 182. First multilayer structure 184 may be similar tomultilayer structure 176 shown in FIG. 16, and the discussion ofmultilayer structure 176 is incorporated herein. Second multilayerstructure 186 may be similar to multilayer structure 138 shown in FIG.13, and the discussion of multilayer structure 138 is incorporatedherein. First multilayer structure 184 and second multilayer structure186 may be simultaneously formed using the processes described above inconnection with FIGS. 7-12.

FIG. 19 depicts a structure in which a first multilayer structure 190and a second multilayer structure 192 are formed next to each other on asubstrate 194. First multilayer structure 190 may be similar tomultilayer structure 176 shown in FIG. 16, and the discussion ofmultilayer structure 176 is incorporated herein. Second multilayerstructure 192 may be similar to multilayer structure 112 shown in FIG.6, and the discussion of multilayer structure 112 is incorporatedherein. First multilayer structure 190 and second multilayer structure192 may be simultaneously formed using the processes described above inconnection with FIGS. 7-12.

FIG. 20 depicts a structure in which a first multilayer structure 196, asecond multilayer structure 198, and a third multilayer structure 200are formed next to each other on a substrate 197. First multilayerstructure 196 may be similar to multilayer structure 176 shown in FIG.16, and the discussion of multilayer structure 176 is incorporatedherein. Second multilayer structure 198 may be similar to multilayerstructure 112 shown in FIG. 6, and the discussion of multilayerstructure 112 is incorporated herein. Third multilayer structure 200 maybe similar to multilayer structure 138 shown in FIG. 13, and thediscussion of multilayer structure 138 is incorporated herein. Firstmultilayer structure 196, second multilayer structure 198, and thirdmultilayer structure 200 may be simultaneously formed using theprocesses described above in connection with FIGS. 7-12.

Many different applications of the above embodiments are possible. Insome embodiments, multilayer structures as described herein may be usedin the formation of a sandwich architecture for an integratedSi-nanosystem device, for example for sensor applications, displayapplications, MEMS applications, and the like.

FIGS. 21-25 depict intermediate stages in the formation of a sandwicharchitecture for an integrated Si-nanosystem device including multilayerstructures as described herein. Referring to FIG. 21, a substrate 210 isdepicted. Any suitable substrate 210 may be used. In some embodiments,substrate 210 may include an integrated circuit that includes one ormore active devices, passive devices, and electrical circuits. Forexample substrate 210 may include a complementarymetal-oxide-semiconductor (CMOS) chip. In other embodiments, substrate210 may be free of active devices, and may include only passive devicesor electrical connectors. In other embodiments, substrate 210 may befree of any active devices, passive devices, or electrical connectors.Any suitable materials may be used to form substrate 210.

Electrical connectors 212 are formed on substrate 210. In someembodiments, electrical connectors 212 are formed of a conductivematerial, such as a metal. For example, electrical connectors 212 may beformed of aluminum, copper, a combination thereof, or the like.Electrical connectors 212 may provide electrical connections to devicesand/or circuits in substrate 210.

A dielectric material 214 may be formed overlying electrical connectors212 and along sidewalls of electrical connectors 212. Dielectricmaterial 214 may extend along a surface of substrate 210. Dielectricmaterial 214 may electrically isolate an electrical connector 212 froman adjacent electrical connector 212. Any suitable dielectric materialmay be used. Dielectric material 214 be formed of a polymer (such aspolybenzoxazole (PBO), polyimide, benzocyclobutene (BCB), or the like),a nitride (such as silicon nitride or the like), an oxide (such assilicon oxide, PhosphoSilicate Glass (PSG), BoroSilicate Glass (BSG),Boron-doped PhosphoSilicate Glass (BPSG), or a combination thereof, orthe like), or the like, and may be formed, for example, by spin coating,lamination, Chemical Vapor Deposition (CVD), or the like.

A bottom conductive layer 216 is formed over dielectric material 214.Bottom conductive layer 216 extends through dielectric material 214 tocontact electrical connectors 212. In this manner, bottom conductivelayer 216 may be electrically connected to an electrical circuit ofsubstrate 210. Bottom conductive layer 216 may be formed of a metal, forexample Al, AlCu, Ti, TiN, or the like. In other embodiments bottomconductive layer 216 may be formed of a metal oxide, for example ITO,ZnO, RuO, or the like. Bottom conductive layer 216 may be formed using asuitable deposition process, such as ALC, CVP, PVD or the like.

Multilayer structures 224, 226 and 228 are formed over the bottomconductive layer 216. In some embodiments, multilayer structures 224,226 and 228 are formed using the processes described above in connectionwith FIGS. 1-20. Although the cross section depicted in FIG. 21 depictsmultilayer structures 224, 226 and 228 as being disconnected from eachother, in plan view two or more of the multilayer structures 224, 226and 228 may be continuous. Further, although three layers are depictedin each of multilayer structures 224, 226 and 228, in some embodimentsone or more of multilayer structures 224, 226 and 228 may be formed ofadditional layers described above in connection with FIGS. 1-20.

In some devices, a first layer, an second layer, a third layer, and afourth layer will be formed over the structure shown in FIG. 21 (seeFIGS. 22-25 below). Each of the first layer, the second layer, the thirdlayer, and the fourth layer will have portions that overlie themultilayer structures 224, 226 and 228, and portions that do not overliethe multilayer structures 224, 226 and 228. It may be desirable in somedevices for the portions of one or more of these layers (for example thesecond layer and the first layer) that do not overlie the multilayerstructures 224, 226 and 228 to be discontinuous from portions of thesecond layer and the first layer that overlie the multilayer structures224, 226 and 228. It may desirable for these devices for other layers,for example the third layer and the fourth layer, to be continuousbetween the portions of the third layer and the fourth layer thatoverlie the multilayer structures 224, 226 and 228 and the portions ofthe third layer and the fourth layer that do not overlie the multilayerstructures 224, 226 and 228. In some embodiments, the multilayerstructures 224, 226 and 228 may enable the formation of the first layer,the second layer, the third layer, and the fourth layer to have thedesired continuous/discontinuous characteristics.

Referring to FIG. 22, a first layer 230 is formed over the bottomconductive layer 216, along sidewalls of multilayer structures 224, 226and 228, and along top surfaces of multilayer structures 224, 226 and228. The first layer 230 is a conductive layer in some embodiments. Thefirst layer 230 may be formed of a metal, for example Al, AlCu, Ti, TiN,or the like. In other embodiments the first layer 230 may be formed of ametal oxide, for example ITO, ZnO, RuO, or the like. In some embodimentsthe first layer 230 is deposited, for example using chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), or the like.

As shown in FIG. 22, the sidewall profiles of multilayer structures 224,226 and 228 enable the first layer 230 to be formed in a manner thatportions of first layer 230 that do not overlie any of the multilayerstructures 224, 226 and 228 are discontinuous with portions of the firstlayer 230 that overlie one of the multilayer structures 224, 226 and228. For example, top surfaces of the first layer 230 may intersect thesecond layers 220 of the multilayer structures 224, 226 and 228, and there-entrant angles of the sidewalls of second layers 220 may help to cutthe portions of first layer 230 that do not overlie any of themultilayer structures 224, 226 and 228 from portions of the first layer230 that overlie one of the multilayer structures 224, 226 and 228.

Referring to FIG. 23, a second layer 232 is formed over the first layer230. Portions of the second layer 232 overlie multilayer structures 224,226, and 228, and other portions of the second layer 232 do not overliethe multilayer structures 224, 226, and 228. In some embodiments thesecond layer 232 is deposited, for example using chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), or the like. The secondlayer 232 is a conductive layer in some embodiments. The second layer232 may be formed of a metal, for example Al, AlCu, Ti, TiN, or thelike. In other embodiments the second layer 232 may be formed of a metaloxide, for example ITO, ZnO, RuO, or the like.

As shown in FIG. 23, the sidewall profiles of multilayer structures 224,226 and 228 enable the second layer 232 to be formed in a manner thatportions of the second layer 232 that do not overlie any of themultilayer structures 224, 226 and 228 are discontinuous with portionsof the second layer 232 that overlie one of the multilayer structures224, 226 and 228. For example, top surfaces of the second layer 232 mayintersect the second layers 220 of the multilayer structures 224, 226and 228, and the re-entrant angles of the sidewalls of second layers 220may help to cut the portions of the second layer 232 that do not overlieany of the multilayer structures 224, 226 and 228 from portions of thesecond layer 232 that overlie one of the multilayer structures 224, 226and 228.

Referring to FIG. 24, a third layer 234 is formed over the second layer232. Portions of the third layer 234 overlie multilayer structures 224,226, and 228, and other portions of the third layer 234 do not overliethe multilayer structures 224, 226, and 228. In some embodiments thethird layer 234 is deposited, for example using chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), or the like. The thirdlayer 234 is a conductive layer in some embodiments. The third layer 234may be formed of a metal, for example Al, AlCu, Ti, TiN, or the like. Inother embodiments the third layer 234 may be formed of a metal oxide,for example ITO, ZnO, RuO, or the like.

As shown in FIG. 24, the sidewall profiles of multilayer structures 224,226 and 228 enable the third layer 234 to be formed in a manner thatportions of the third layer 234 that do not overlie any of themultilayer structures 224, 226 and 228 are continuous with portions ofthe third layer 234 that overlie one of the multilayer structures 224,226 and 228. For example, top surfaces of the third layer 234 mayintersect the third layers 222 of the multilayer structures 224, 226 and228, and the taper angles of the sidewalls of third layers 222 may helpto enable the portions of the third layer 234 that do not overlie any ofthe multilayer structures 224, 226 and 228 to be continuous withportions of the third layer 234 that overlie one of the multilayerstructures 224, 226 and 228.

Referring to FIG. 25, a fourth layer 236 is formed over the third layer234. Portions of the fourth layer 236 overlie multilayer structures 224,226, and 228, and other portions of the fourth layer 236 do not overliethe multilayer structures 224, 226, and 228. In some embodiments thefourth layer 236 is deposited, for example using chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), plasma enhanced CVD (PECVD), or the like. The fourthlayer 236 is a conductive layer in some embodiments. The fourth layer236 may be formed of a metal, for example Al, AlCu, Ti, TiN, or thelike. In other embodiments the fourth layer 236 may be formed of a metaloxide, for example ITO, ZnO, RuO, or the like.

As shown in FIG. 25, the sidewall profiles of multilayer structures 224,226 and 228 enable the fourth layer 236 to be formed in a manner thatportions of the fourth layer 236 that do not overlie any of themultilayer structures 224, 226 and 228 are continuous with portions ofthe fourth layer 236 that overlie one of the multilayer structures 224,226 and 228. For example, top surfaces of the fourth layer 236 mayintersect the third layers 222 of the multilayer structures 224, 226 and228, and the taper angles of the sidewalls of third layers 222 may helpto enable the portions of the fourth layer 236 that do not overlie anyof the multilayer structures 224, 226 and 228 to be continuous withportions of the fourth layer 236 that overlie one of the multilayerstructures 224, 226 and 228.

As described herein, multi-layer structures, and methods of formingmulti-layer structures, are provided in accordance with someembodiments. The multi-layer structures may include sidewalls havingprofiles that may be tailored to a particular design. For example, in amulti-layered structure, one layer of the multi-layered structure mayhave a sidewall that extends at a first angle, a second layer of themulti-layered structure may have a sidewall that extends at a secondangle, and the first and second angle may be different from each other.The multi-layer structure may also include additional layers, andsidewalls of the additional layers may extend at angles that are thesame as the first angle or the second angle, or different from the firstangle or the second angle. In this manner, a desired sidewall profile ofthe multi-layer structure may be achieved.

In accordance with some embodiments, a desired sidewall profile of amulti-layer structure may be achieved with only onedeposition/lithography/etching process, instead of using multipledeposition/lithography/etching processes. Accordingly, a multi-layerstructure having a desired sidewall profile may be formed at a lowercost and with less time. Accordingly, manufacturing cycle times and/oroutputs may be improved.

In accordance with some embodiments, a multi-layer structure having asidewall profile as described herein may be utilized in the formation ofintegrated Si-nanosystem devices that contain sandwich architecturesextending beside and overlying multi-layer structures. In someembodiments the multi-layer structures overlie a substrate, for examplea silicon-complementary metal oxide semiconductor (CMOS) chip. SomeSi-nanosystem devices may include a multi-layer structure over the CMOSchip. One or more layers may overlie the multi-layer structure, andthese layers may extend laterally beyond the multi-layer structure overthe CMOS chip. In some devices, it may be desirable to form a firstlayer of the one or more layers in a manner that a first portion of thefirst layer that does not overlie the multi-layer structure isdiscontinuous with a second portion of the first layer that overlies themulti-layer structure. Similarly, in some devices it may be desirable toform a second layer in a manner that a first portion of the second layerthat contacts the first portion of the first layer is discontinuous froma second portion of the second layer that overlies the second portion ofthe first layer. Other layers may be desired to be continuous betweenportions of the layers that overlie the multi-layer structure andportions that do not overlie the multi-layer structure. The sidewallprofile of the multi-layer structure may be designed in a matter that atleast a portion of the sidewall helps to confine and/or cut off thefirst portion of the first layer from the second portion of the firstlayer, and/or the first portion of the second layer from the secondportion of the second layer, while allowing other layers to be formed tobe continuous.

A method is provided in accordance with some embodiments. The methodincludes depositing a plurality of layers on a substrate; patterning afirst mask overlying the plurality of layers; performing a first etchingprocess on the plurality of layers using the first mask as an etchingmask, wherein after the first etching process the plurality of layersextend laterally beyond the first mask, and sidewalls of the pluralityof layers are tapered; forming a polymer material along sidewalls of thefirst mask and sidewalls of the plurality of layers; removing thepolymer material, wherein the removing of the polymer material consumesa portion of the first mask to form a remaining first mask; andperforming a second etching process on the plurality of layers using theremaining first mask, wherein after the second etching processterminates a combined sidewall profile of the plurality of layerscomprises a first portion and a second portion, and wherein a firstangle of the first portion and a second angle of the second portion aredifferent. In an embodiment removing of the polymer material causessidewalls of the first mask to be tapered. In an embodiment the firstangle is formed by the first portion with respect to a major surface ofthe substrate, and the second angle is formed by the second portion withrespect to the major surface of the substrate, and the first angle isacute and wherein the second angle is obtuse. In an embodiment theplurality of layers includes a first layer, a second layer, and a thirdlayer, the first portion comprises a sidewall of the first layer, thesecond portion comprises a sidewall of the second layer, and a thirdportion of the combined sidewall profile comprises a sidewall of thethird layer, and the first angle, the second angle, and a third angle ofthe third portion are different. In an embodiment the first angle is ina range of 55-90 degrees. In an embodiment the second angle is in arange of 80-145 degrees. In an embodiment the third angle is in a rangeof 55-100 degrees. In an embodiment the method further includes forminga first layer, where a first portion of the first layer overlies theplurality of layers and a second portion of the first layer does notoverlie the plurality of layers, and the first portion of the firstlayer is physically disconnected from the second portion of the firstlayer. In an embodiment the method further includes forming a secondlayer over the first layer, where a first portion of the second layeroverlies the plurality of layers and a second portion of the secondlayer does not overlie the plurality of layers, and the first portion ofthe second layer is physically disconnected from the second portion ofthe second layer. In an embodiment the method further includes forming athird layer, where the third layer is continuous between a first portionof the third layer that overlies the plurality of layers and a secondportion of the third layer that does not overlie the plurality oflayers, and the method further includes forming a fourth layer, wherethe fourth layer is continuous between a first portion of the fourthlayer that overlies the plurality of layers and a second portion of thefourth layer that does not overlie the plurality of layers.

A method is provided in accordance with some embodiments. The methodincludes forming a first plurality of layers on a substrate, where amaterial composition of a first layer of the first plurality of layersis different than a material composition of a second layer of the firstplurality of layers; forming a photoresist material over the firstplurality of layers; patterning the photoresist material to form a firstmask and a second mask; performing a first etching process using thefirst mask and the second mask as etching masks, where the first etchingprocess removes portions of the first plurality of layers that extendbetween the first mask and the second mask to form a second plurality oflayers underlying the first mask and a third plurality of layersunderlying the second mask; forming a polymer along sidewalls of thefirst mask and the second mask, wherein sidewalls of the polymer aretapered; removing the polymer using an ashing process, where the ashingprocess consumes a portion of the first mask and a portion of the secondmask, to form a remaining first mask and a remaining second mask, wherea shape of the remaining first mask is different than a shape of thefirst mask and a shape of the remaining second mask is different than ashape of the second mask; performing a second etching process on thesecond plurality of layers and the third plurality of layers using theremaining first mask and the remaining second mask as etching masks,where the second etching process terminates when a sidewall profile ofthe second plurality of layers is a target sidewall profile, and thetarget sidewall profile comprises different portions of the targetsidewall profile extending at different angles; and removing theremaining first mask and the remaining second mask. In an embodimentsidewalls of the remaining first mask and the remaining second mask aretapered after the ashing process. In an embodiment the second etchingprocess is performed using a first etchant and oxygen gas as etchants,and the first etchant comprises carbon and fluorine. In an embodimentthe second plurality of layers comprises a first layer, a second layer,a third layer, and a fourth layer, where a first angle is formed by asidewall of the first layer and a major surface of the substrate, asecond angle is formed by a sidewall of the second layer and the majorsurface of the substrate, a third angle is formed by a sidewall of thethird layer and the major surface of the substrate, a fourth angle isformed by a sidewall of the fourth layer and the major surface of thesubstrate, where the second angle and the third angle are the same, andwherein the first angle and the fourth angle are different than thesecond angle and the third angle. In an embodiment the method furtherincludes forming a first layer, a second layer, a third layer, and afourth layer along sidewalls of the second plurality of layers, wherethe target sidewall profile causes the first layer and the second layerto be discontinuous along the sidewalls of the first plurality of layersand the target sidewall profile causes the third layer and the fourthlayer to be continuous along the sidewalls of the first plurality oflayers. In an embodiment the first plurality of layers comprises atleast six layers.

A device is provided in accordance with some embodiments. The deviceincludes a substrate; a bottom conductive layer overlying the substrate;a multilayer structure over the bottom conductive layer, where a firstportion of the bottom conductive layer is free of the multilayerstructure and a second portion of the bottom conductive layer is coveredby the multilayer structure; a first layer, where a first portion of thefirst layer overlies the first portion of the bottom conductive layerand a second portion of the first layer overlies the multilayerstructure, and the first portion of the first layer is discontinuouswith the second portion of the first layer, and wherein a portion of themultilayer structure extends between the first portion of the firstlayer and the second portion of the first layer; a second layer, where afirst portion of the second layer overlies the first portion of thefirst layer and a second portion of the second layer overlies themultilayer structure, and the first portion of the second layer isdiscontinuous with the second portion of the second layer, and whereinthe portion of the multilayer structure extends between the firstportion of the second layer and the second portion of the second layer;a third layer, where a first portion of the third layer overlies thefirst portion of the second layer and a second portion of the thirdlayer overlies the second portion of the second layer, and the firstportion of the third layer is continuous with the second portion of thethird layer; and a fourth layer overlying the third layer, where a firstportion of the fourth layer overlies the first portion of the thirdlayer and a second portion of the fourth layer overlies the secondportion of the third layer, and the first portion of the fourth layer iscontinuous with the second portion of the fourth layer. In an embodimentthe multilayer structure comprises a fifth layer, a sixth layer, and asecond layer, and a portion of the sixth layer extends between the firstportion of the first layer and the second portion of the first layer. Inan embodiment the portion of the sixth layer extends between the firstportion of the second layer and the second portion of the second layer.In an embodiment the first layer covers a sidewall of the fifth layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A method, comprising: depositing a plurality of layers on asubstrate; patterning a first mask overlying the plurality of layers;performing a first etching process on the plurality of layers using thefirst mask as an etching mask, wherein after the first etching processthe plurality of layers extend laterally beyond the first mask, andsidewalls of the plurality of layers are tapered; forming a polymermaterial along sidewalls of the first mask and sidewalls of theplurality of layers; removing the polymer material, wherein the removingof the polymer material consumes a portion of the first mask to form aremaining first mask; and performing a second etching process on theplurality of layers using the remaining first mask, wherein after thesecond etching process terminates a combined sidewall profile of theplurality of layers comprises a first portion and a second portion, andwherein a first angle of the first portion and a second angle of thesecond portion are different.
 2. The method according to claim 1,wherein the removing of the polymer material causes sidewalls of thefirst mask to be tapered.
 3. The method according to claim 1, whereinthe first angle is formed by the first portion with respect to a majorsurface of the substrate, and the second angle is formed by the secondportion with respect to the major surface of the substrate, wherein thefirst angle is acute and wherein the second angle is obtuse.
 4. Themethod according to claim 1, wherein the plurality of layers includes afirst layer, a second layer, and a third layer, wherein the firstportion comprises a sidewall of the first layer, the second portioncomprises a sidewall of the second layer, and a third portion of thecombined sidewall profile comprises a sidewall of the third layer, andwherein the first angle, the second angle, and a third angle of thethird portion are different.
 5. The method according to claim 4, whereinthe first angle is in a range of 55-90 degrees.
 6. The method accordingto claim 5, wherein the second angle is in a range of 80-145 degrees. 7.The method according to claim 6, wherein the third angle is in a rangeof 55-100 degrees.
 8. The method according to claim 1, furthercomprising: forming a first layer, wherein a first portion of the firstlayer overlies the plurality of layers and a second portion of the firstlayer does not overlie the plurality of layers, and the first portion ofthe first layer is physically disconnected from the second portion ofthe first layer.
 9. The method according to claim 8, further comprising:forming a second layer over the first layer, wherein a first portion ofthe second layer overlies the plurality of layers and a second portionof the second layer does not overlie the plurality of layers, and thefirst portion of the second layer is physically disconnected from thesecond portion of the second layer.
 10. The method according to claim 9,further comprising: forming a third layer, wherein the third layer iscontinuous between a first portion of the third layer that overlies theplurality of layers and a second portion of the third layer that doesnot overlie the plurality of layers; and forming a fourth layer, whereinthe fourth layer is continuous between a first portion of the fourthlayer that overlies the plurality of layers and a second portion of thefourth layer that does not overlie the plurality of layers.
 11. Amethod, comprising: forming a first plurality of layers on a substrate,wherein a material composition of a first layer of the first pluralityof layers is different than a material composition of a second layer ofthe first plurality of layers; forming a photoresist material over thefirst plurality of layers; patterning the photoresist material to form afirst mask and a second mask; performing a first etching process usingthe first mask and the second mask as etching masks, wherein the firstetching process removes portions of the first plurality of layers thatextend between the first mask and the second mask to form a secondplurality of layers underlying the first mask and a third plurality oflayers underlying the second mask; forming a polymer along sidewalls ofthe first mask and the second mask, wherein sidewalls of the polymer aretapered; removing the polymer using an ashing process, wherein theashing process consumes a portion of the first mask and a portion of thesecond mask, to form a remaining first mask and a remaining second mask,wherein a shape of the remaining first mask is different than a shape ofthe first mask and a shape of the remaining second mask is differentthan a shape of the second mask; performing a second etching process onthe second plurality of layers and the third plurality of layers usingthe remaining first mask and the remaining second mask as etching masks,wherein the second etching process terminates when a sidewall profile ofthe second plurality of layers is a target sidewall profile, and thetarget sidewall profile comprises different portions of the targetsidewall profile extending at different angles; and removing theremaining first mask and the remaining second mask.
 12. The methodaccording to claim 11, wherein sidewalls of the remaining first mask andthe remaining second mask are tapered after the ashing process.
 13. Themethod according to claim 11, wherein the second etching process isperformed using a first etchant and oxygen gas as etchants, and thefirst etchant comprises carbon and fluorine.
 14. The method according toclaim 11, wherein the second plurality of layers comprises a firstlayer, a second layer, a third layer, and a fourth layer, wherein afirst angle is formed by a sidewall of the first layer and a majorsurface of the substrate, a second angle is formed by a sidewall of thesecond layer and the major surface of the substrate, a third angle isformed by a sidewall of the third layer and the major surface of thesubstrate, a fourth angle is formed by a sidewall of the fourth layerand the major surface of the substrate, wherein the second angle and thethird angle are the same, and wherein the first angle and the fourthangle are different than the second angle and the third angle.
 15. Themethod according to claim 11, further comprising: forming a first layer,a second layer, a third layer, and a fourth layer along sidewalls of thesecond plurality of layers, wherein the target sidewall profile causesthe first layer and the second layer to be discontinuous along thesidewalls of the first plurality of layers and the target sidewallprofile causes the third layer and the fourth layer to be continuousalong the sidewalls of the first second plurality of layers.
 16. Themethod according to claim 11, wherein the first plurality of layerscomprises at least six layers.
 17. A device, comprising: a substrate; abottom conductive layer overlying the substrate; a multilayer structureover the bottom conductive layer, wherein a first portion of the bottomconductive layer is free of the multilayer structure and a secondportion of the bottom conductive layer is covered by the multilayerstructure; a first layer, wherein a first portion of the first layeroverlies the first portion of the bottom conductive layer and a secondportion of the first layer overlies the multilayer structure, and thefirst portion of the first layer is discontinuous with the secondportion of the first layer, and wherein a portion of the multilayerstructure extends between the first portion of the first layer and thesecond portion of the first layer; a second layer, wherein a firstportion of the second layer overlies the first portion of the firstlayer and a second portion of the second layer overlies the multilayerstructure, and the first portion of the second layer is discontinuouswith the second portion of the second layer, and wherein the portion ofthe multilayer structure extends between the first portion of the secondlayer and the second portion of the second layer; a third layer, whereina first portion of the third layer overlies the first portion of thesecond layer and a second portion of the third layer overlies the secondportion of the second layer, and the first portion of the third layer iscontinuous with the second portion of the third layer; and a fourthlayer overlying the third layer, wherein a first portion of the fourthlayer overlies the first portion of the third layer and a second portionof the fourth layer overlies the second portion of the third layer, andthe first portion of the fourth layer is continuous with the secondportion of the fourth layer.
 18. The device according to claim 17,wherein the multilayer structure comprises a fifth layer, a sixth layer,and a second seventh layer, and wherein a portion of the sixth layerextends between the first portion of the first layer and the secondportion of the first layer.
 19. The device according to claim 18,wherein the portion of the sixth layer extends between the first portionof the second layer and the second portion of the second layer.
 20. Thedevice according to claim 19, wherein the first layer covers a sidewallof the fifth layer.